GaN and GaAs HFET high power transistors for high power amplification. Designed for base stations and cell extenders and operating frequency range is from 50MHz to almost 4GHz.

Features:

• 50 ~ 5000 MHz
  
• High Breakdown Voltage
  
• GaN or GaAs Transistors
  
• High output power
  
• High efficiency
  
• High power gain
  
• Hermetically sealed package

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RFHIC

Power Transistors

RF Power Transistors for broadband and WiMAX applications based on the company's Gallium Nitride (GaN) technology. The GaN transistors are developed to meet the high power, high frequency requirements of next generation WiMAX and WCDMA markets.

Utilising their patented process of growing GaN on silicon, Nitronex manufactures power transistors for use in power amplifiers at 3.3 to 3.8 GHz and 2.3 to 2.7 GHz bands, delivering 50 Watts RF power.

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Nitronex Corporation

RF Power Transistors