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 | RF Power Transistors for broadband and WiMAX applications based on the company's Gallium Nitride (GaN) technology. The GaN transistors are developed to meet the high power, high frequency requirements ... Read more ... RF Power Transistors for broadband and WiMAX applications based on the company's Gallium Nitride (GaN) technology. The GaN transistors are developed to meet the high power, high frequency requirements of next generation WiMAX and WCDMA markets. Utilising their patented process of growing GaN on silicon, Nitronex manufactures power transistors for use in power amplifiers at 3.3 to 3.8 GHz and 2.3 to 2.7 GHz bands, delivering 50 Watts RF power.   Nitronex Corporation RF Power Transistors | | ||
Components
RF& MW