High Speed Photodiodes
Albis
Photodiodes Albis Optoelectronics designs high-speed photodiode chips for analog and digital broadband high-speed receiver front-ends and for detecting optical signals with picosecond time resolution.
The InGaAs based photodiodes cover both the 850 nm wavelength space used for short-reach datacom applications as well as the 1270 - 1620 nm wavelengths space used for medium to long-reach data- and telecom applications.
The photodiodes offer excellent responsivity, high-speed response and achieve full performance at operating bias voltages starting from below 2 volts reverse.
Photodiodes Chips
Photodiodes Arrays designs high-speed photodiode arrays for optical interconnect as well as for CWDM and WWDM applications. The InGaAs based photodiode arrays cover both the 850 nm and 1310 nm wavelength space used for VCSEL based optical interconnect solutions as well as various CWDM and WWDM application standards like 10G Ethernet LX4. Built-on semi-insulating InP substrates, the photodiode arrays feature individual anode and cathode contact pads for each photodiode. Arranged with a 250µm pitch, the photodiode arrays offer excellent responsivity, high-speed response and achieve full performance at operating bias voltages starting from below 2 volts reverse.
Photodiodes Arrays
The photodiodes offer excellent responsivity, high-speed response and achieve full performance at operating bias voltages starting from below 2 volts reverse.
Photodiodes Chips Photodiodes Arrays designs high-speed photodiode arrays for optical interconnect as well as for CWDM and WWDM applications. The InGaAs based photodiode arrays cover both the 850 nm and 1310 nm wavelength space used for VCSEL based optical interconnect solutions as well as various CWDM and WWDM application standards like 10G Ethernet LX4. Built-on semi-insulating InP substrates, the photodiode arrays feature individual anode and cathode contact pads for each photodiode. Arranged with a 250µm pitch, the photodiode arrays offer excellent responsivity, high-speed response and achieve full performance at operating bias voltages starting from below 2 volts reverse.
Photodiodes Arrays 
GaAs Hybrid Photodetecetors
OSI Optoelectronics
GaAs Photodiode with Transimpedance Ampifier-1.25Gbps/2.5Gbps:The FCI-H125G/250G serie is a 100µm active area size with a wide dynamic range transimpedance amplifier.
Low capacitance, and high responsivity from 650 to 860nm make this device ideal for high bit rate receivers used in LAN, MAN, and other high speed communications systems.
Main Features:
- Low noise transimpedance amplifier
- Single +3.3V to +5v Power supply
- 650nm to 850nm spectral range
- Differential output
Applications:
- High speed optical communications
- Gigabit Ethernet
- Fibre channel
- ATM
- SONET OC-48/ SDH STM-13
High Speed GaAs Arrays
OSI Optoelectronics
The FCI-GaAs serie is avialable with 4,12 element GaAs PIN photodetector array designed for hig speed fiber receiver and monitoring applications.
The 70μm diameter elements are capable of 2.5Gbps data rates.
This array is a perfect receiver for SM or MM fiber ribbon with 250μm pitch.
This array is a perfect receiver for SM or MM fiber ribbon with 250μm pitch.
- Main Features:
- Applications:
- Fiber optic receiver
- DWDM
- SM or MM fiber ribbon
- parallel interconnects
Fibre Optics 
