Avago's multi-market wireless solutions include an extensive portfolio of Silicon bipolar transistors and discrete GaAs FETs, as well as high-performance, low-cost millimeter wave MMICs for a wide range of DC to 50-GHz RF and 10- to 40-Gb/s.

It boasts the broadest portfolio of surface-mount PIN diodes for the cellular/PCS base station, WLAN, CATV, LNB and other wireless communications markets. In addition, Avago's series of surface-mount Schottky diodes feature low turn-on voltage and capacitance, and provide the most consistent performance available. Its wide range of GaAs and Silicon RFICs come in a variety of industry standard packages.

Millimeter Wave and Microwave Devices

• Amplifiers
• Attenuators
• Frequency Multipliers
• Mixers
• Prescalers
• Switches
• Demonstration Circuit Boards

RFICs (Including Amplifiers and Mixers)
• GaAs RFICs
• Silicon RFICs
• Demonstration Circuit Boards

PIN Diodes

• Axial Glass Packaged PIN Diodes
• Microwave PIN Diodes
• Surface Mount PIN Diodes
• Demonstration Circuit Boards

Schottky Diodes

• Axial Glass Packaged Schottky Diodes
• Millimeter Wave and Microwave Beam Lead Schottky Diodes
• Surface Mount Schottky Diodes
• Demonstration Circuit Boards

Discrete Transistors

• GaAs Field Effect Transistors
• Silicon Bipolar Transistors
• Demonstration Circuit Boards

RF & Microwave Products More...

Avago Technologies

RF & Microwave Products

Medium to High power, highly reliable GaAs FET designed for various RF and microwave applications.

Hexawave

GaAs Power MESFET

Product range :Varactor - PIN Diodes - Limiter - Schottky - VCO

Skyworks Inc

Diodes

Power GaAs FETs and Power GaAs MMIC Toshiba product line.

Power GaAs FETs:

• L, S-band partially Matched
• c-Band internally Matched
• X, Ku-Band internally Matched
• Medium Power

Power GaAs MMIC

Toshiba MW

Microwave Products

RF Power Transistors for broadband and WiMAX applications based on the company's Gallium Nitride (GaN) technology. The GaN transistors are developed to meet the high power, high frequency requirements of next generation WiMAX and WCDMA markets.

Utilising their patented process of growing GaN on silicon, Nitronex manufactures power transistors for use in power amplifiers at 3.3 to 3.8 GHz and 2.3 to 2.7 GHz bands, delivering 50 Watts RF power.

More Information

Nitronex Corporation

RF Power Transistors